2008. 9. 10 1/2 semiconductor technical data PG03GXTE6 tvs diode array for esd protection in portable electronics revision no : 2 protection in portable electronics applications. features 150 watts peak pulse power (tp=8/20 s) transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact). protects five i/o lines. low clamping voltage. low operating and leakage current. small package for use in portable electronics. applications cell phone handsets and accessories. cordless phones. personal digital assistants (pda?s) notebooks, desktops, & servers. portable instrumentation. set-top box, dvd player. digital camera. maximum rating (ta=25 ) dim millimeters a a1 b1 c tes6 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 b d h j b1 b d a a1 c c j h 1 2 3 6 4 p p p5 5 + _ + _ + _ + _ + _ + _ + _ 1. d1 2. common anode 3. d2 4. d3 5. d4 6. d5 electrical characteristics (ta=25 ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 150 w peak pulse current (tp=8/20 s) i pp 15 a operating temperature t j -55 150 storage temperature t stg -55 150 marking 123 4 65 123 4 5 6 d5 d4 d3 d1 d2 3x type name lot no. characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 3.3 v reverse breakdown voltage v br i t =1ma 4.2 - - v reverse leakage current i r v rwm =3.3v - - 30 a clamping voltage v c i pp =15a, tp=8/20 s 10.9 junction capacitance c j v r =0v, f=1mhz between i/o pins and gnd - - 120 pf
2008. 9. 10 2/2 PG03GXTE6 revision no : 2 pulse duration tp ( s) 110 pp peak pulse power p (w) 100 10 100 1k peak pulse power 8/20us average power waveform parameters : tr=8 s e -t td=20 s td=lpp/2 rated power or i (%) 0 pp 110 70 50 25 0 ambient temperature ta ( c) power deration curve 75 100 125 150 10 20 30 40 80 90 50 100 60 peak pulse current i (%) 0 pp 110 70 10 5 0 time ( s) pulse waveform 15 20 25 30 10 20 30 40 80 90 50 100 60 non-repetitive peak pulse power vs. pulse time
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